This paper describes the fabrication of memristor devices based on titanium and hafnium oxides. The device cross sectional area is varied to observe the impact this has on the current-voltage characteristic. A modeling technique is then utilized that is capable of matching the current-voltage characteristics of memristor devices. The model was able to match the titanium oxide device described in this paper with 13.58% error. The device model was then used in a neuromorphic simulation showing that a circuit based on this device is capable of learning logic functions.


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    Title :

    Fabrication, characterization, and modeling of memristor devices


    Contributors:


    Publication date :

    2014-06-01


    Size :

    732097 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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