This paper presents the fabrication technique and results obtained for a titanium oxide based memristor design. A memristor wafer was developed that contains isolated devices as well as small memristor crossbar arrays (36 devices). The current-voltage relationship of the devices shows a memristive switching effect that is more apparent when the devices are negatively biased.


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    Title :

    TiO2 memristor devices


    Contributors:


    Publication date :

    2011-07-01


    Size :

    447597 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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