This paper presents the fabrication technique and results obtained for a titanium oxide based memristor design. A memristor wafer was developed that contains isolated devices as well as small memristor crossbar arrays (36 devices). The current-voltage relationship of the devices shows a memristive switching effect that is more apparent when the devices are negatively biased.


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    Titel :

    TiO2 memristor devices


    Beteiligte:
    Yakopcic, Chris (Autor:in) / Sarangan, Andrew (Autor:in) / Gao, Jian (Autor:in) / Taha, Tarek M. (Autor:in) / Subramanyam, Guru (Autor:in) / Rogers, Stanley (Autor:in)


    Erscheinungsdatum :

    01.07.2011


    Format / Umfang :

    447597 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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