This paper presents the fabrication technique and results obtained for a titanium oxide based memristor design. A memristor wafer was developed that contains isolated devices as well as small memristor crossbar arrays (36 devices). The current-voltage relationship of the devices shows a memristive switching effect that is more apparent when the devices are negatively biased.
TiO2 memristor devices
01.07.2011
447597 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch