This paper describes the fabrication of memristor devices based on titanium and hafnium oxides. The device cross sectional area is varied to observe the impact this has on the current-voltage characteristic. A modeling technique is then utilized that is capable of matching the current-voltage characteristics of memristor devices. The model was able to match the titanium oxide device described in this paper with 13.58% error. The device model was then used in a neuromorphic simulation showing that a circuit based on this device is capable of learning logic functions.
Fabrication, characterization, and modeling of memristor devices
01.06.2014
732097 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
IEEE | 2011
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