This paper describes the fabrication of memristor devices based on titanium and hafnium oxides. The device cross sectional area is varied to observe the impact this has on the current-voltage characteristic. A modeling technique is then utilized that is capable of matching the current-voltage characteristics of memristor devices. The model was able to match the titanium oxide device described in this paper with 13.58% error. The device model was then used in a neuromorphic simulation showing that a circuit based on this device is capable of learning logic functions.


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    Titel :

    Fabrication, characterization, and modeling of memristor devices


    Beteiligte:
    Wang, Weisong (Autor:in) / Yakopcic, Chris (Autor:in) / Shin, Eunsung (Autor:in) / Leedy, Kevin (Autor:in) / Taha, Tarek M. (Autor:in) / Subramanyam, Guru (Autor:in)


    Erscheinungsdatum :

    01.06.2014


    Format / Umfang :

    732097 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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