Resistive random access memories (RRAM) can be made of a variety of materials, including metal oxides and metal-doped chalcogenides, that exhibit memristive behavior. RRAMs have been identified as a leading candidate to replace flash memory and may also be suitable as replacements for other types of memory, including DRAM and SRAM. When sandwiched between two electrodes, specially grown thin films can be switched with applied bias between a high (off ) and a low resistance (on) state. Since 2007, these devices have been considered as candidates for space applications due to their device properties. There is a high density of inherent defects in the as-fabricated devices, which is likely to contribute to their tolerance to displacement damage. In addition, the nanometer length scale of the active device layers allows the devices to dissipate the charge deposited from ionizing dose. However, the testing of devices over several different radiation studies has revealed potential reliability concerns, including device to device variation, device sensitivity to measurements and physical device changes that occur with cycling between states. In this paper, we will discuss these concerns and present initial results of biased radiation testing of TaOx and TiO2 devices with ionizing radiation.
Reliability considerations and radiation testing of memristor devices
2015-03-01
22039056 byte
Conference paper
Electronic Resource
English
IEEE | 2011
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