Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells.


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    Title :

    Reducing internal field effects with high aluminum AlGaN quantum wells


    Contributors:
    Chow, W.W. (author) / Wieczorek, S. (author) / Fischer, A.J. (author) / Crawford, M.H. (author) / Allerman, A.A. (author) / Lee, S.R. (author)


    Publication date :

    2004-01-01


    Size :

    177399 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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