Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells.
Reducing internal field effects with high aluminum AlGaN quantum wells
2004-01-01
177399 byte
Conference paper
Electronic Resource
English
Reducing Internal Field Effects with High Aluminum AlGaN Quantum Wells
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