A method for mitigating internal electric field effects and improving optical performance of AlGaN quantum wells is described. The underlying mechanism is the significant difference between the z-direction effective hole masses for the heavy-hole and crystal-split-hole bands.
Improving optical performance of AlGaN quantum wells
2004-01-01
71421 byte
Conference paper
Electronic Resource
English
Improving Optical Performance of AlGaN Quantum Wells
British Library Conference Proceedings | 2004
|Spontaneous Polarization Effects on the Optical Properties of AlGaN/InGaN/GaN Quantum Wells
British Library Conference Proceedings | 2001
|Reducing Internal Field Effects with High Aluminum AlGaN Quantum Wells
British Library Conference Proceedings | 2004
|