A method for mitigating internal electric field effects and improving optical performance of AlGaN quantum wells is described. The underlying mechanism is the significant difference between the z-direction effective hole masses for the heavy-hole and crystal-split-hole bands.


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    Title :

    Improving optical performance of AlGaN quantum wells


    Contributors:
    Wieczorek, S. (author) / Fischer, A.J. (author) / Lee, S.R. (author) / Allerman, A.A. (author) / Crawford, M.H. (author) / Chow, W.W. (author)


    Publication date :

    2004-01-01


    Size :

    71421 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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