Large spectral red shifting (/spl sim/140 meV) and reduced radiative recombination efficiency are observed on the high excitation luminescence spectra of InGaN/GaN quantum wells capped with a AlGaN top barrier compared with that of a GaN cap layer. These observations are ascribed to the additive internal field effect due to the spontaneous polarization induced volume charge at the AlGaN/InGaN interface.


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    Title :

    Spontaneous polarization effects on the optical properties of AlGaN/InGaN/GaN quantum wells


    Contributors:
    Peng, L.-H. (author) / Hsu, K.-T. (author) / Shih, C.-W. (author) / Chun, C.-C. (author) / Chyi, J.I. (author)


    Publication date :

    2001-01-01


    Size :

    155408 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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