Large spectral red shifting (/spl sim/140 meV) and reduced radiative recombination efficiency are observed on the high excitation luminescence spectra of InGaN/GaN quantum wells capped with a AlGaN top barrier compared with that of a GaN cap layer. These observations are ascribed to the additive internal field effect due to the spontaneous polarization induced volume charge at the AlGaN/InGaN interface.
Spontaneous polarization effects on the optical properties of AlGaN/InGaN/GaN quantum wells
01.01.2001
155408 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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