Large spectral red shifting (/spl sim/140 meV) and reduced radiative recombination efficiency are observed on the high excitation luminescence spectra of InGaN/GaN quantum wells capped with a AlGaN top barrier compared with that of a GaN cap layer. These observations are ascribed to the additive internal field effect due to the spontaneous polarization induced volume charge at the AlGaN/InGaN interface.


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    Titel :

    Spontaneous polarization effects on the optical properties of AlGaN/InGaN/GaN quantum wells


    Beteiligte:
    Peng, L.-H. (Autor:in) / Hsu, K.-T. (Autor:in) / Shih, C.-W. (Autor:in) / Chun, C.-C. (Autor:in) / Chyi, J.I. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    155408 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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