A method for mitigating internal electric field effects and improving optical performance of AlGaN quantum wells is described. The underlying mechanism is the significant difference between the z-direction effective hole masses for the heavy-hole and crystal-split-hole bands.


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    Titel :

    Improving optical performance of AlGaN quantum wells


    Beteiligte:
    Wieczorek, S. (Autor:in) / Fischer, A.J. (Autor:in) / Lee, S.R. (Autor:in) / Allerman, A.A. (Autor:in) / Crawford, M.H. (Autor:in) / Chow, W.W. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    71421 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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