A method for mitigating internal electric field effects and improving optical performance of AlGaN quantum wells is described. The underlying mechanism is the significant difference between the z-direction effective hole masses for the heavy-hole and crystal-split-hole bands.
Improving optical performance of AlGaN quantum wells
01.01.2004
71421 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Improving Optical Performance of AlGaN Quantum Wells
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