Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Reducing internal field effects with high aluminum AlGaN quantum wells


    Beteiligte:
    Chow, W.W. (Autor:in) / Wieczorek, S. (Autor:in) / Fischer, A.J. (Autor:in) / Crawford, M.H. (Autor:in) / Allerman, A.A. (Autor:in) / Lee, S.R. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    177399 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Reducing Internal Field Effects with High Aluminum AlGaN Quantum Wells

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004


    Improving optical performance of AlGaN quantum wells

    Wieczorek, S. / Fischer, A.J. / Lee, S.R. et al. | IEEE | 2004


    Improving Optical Performance of AlGaN Quantum Wells

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004



    Spontaneous Polarization Effects on the Optical Properties of AlGaN/InGaN/GaN Quantum Wells

    Peng, L.-H. / Hsu, K.-T. / Shih, C.-W. et al. | British Library Conference Proceedings | 2001