This study presents the design and performance of self-assembled quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) in a bipolar cascade configuration. The experimental VCSELs are grown by molecular beam epitaxy and consist of highly reflective Al/sub x/Ga/sub 1-x/As (x = 0.0 and x = 0.9) doped DBR mirrors on a GaAs substrate, surrounding a GaAs-based microcavity active region containing stacks of InAs/InGaAs QDs.
GaAs-based bipolar cascade InAs/InGaAs quantum dot VCSELs emitting near 1300 nm
2005-01-01
182726 byte
Conference paper
Electronic Resource
English
GaAs-Based Bipolar Cascade InAs/InGaAs Quantum Dot VCSELs Emitting Near 1300 nm
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