The first near 1300 nm electrically-injected vertical cavity surface emitting lasers containing sheets of self-assembled InAs/InGaAs quantum dot active regions grown on GaAs substrates that emit over 1 mW continuous wave peak power at room temperature are demonstrated.


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    Title :

    GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm


    Contributors:
    Lott, J.A. (author) / Kovsh, A.R. (author) / Ledentsov, N.N. (author) / Bimberg, D. (author)


    Publication date :

    2005-01-01


    Size :

    197502 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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