This study presents the design and performance of self-assembled quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) in a bipolar cascade configuration. The experimental VCSELs are grown by molecular beam epitaxy and consist of highly reflective Al/sub x/Ga/sub 1-x/As (x = 0.0 and x = 0.9) doped DBR mirrors on a GaAs substrate, surrounding a GaAs-based microcavity active region containing stacks of InAs/InGaAs QDs.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    GaAs-based bipolar cascade InAs/InGaAs quantum dot VCSELs emitting near 1300 nm


    Beteiligte:
    Lott, J.A. (Autor:in) / Stintz, A. (Autor:in) / Kovsh, A.R. (Autor:in) / Ledentsov, N.N. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    182726 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    GaAs-Based Bipolar Cascade InAs/InGaAs Quantum Dot VCSELs Emitting Near 1300 nm

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005



    1300-nm wafer-fused VCSELs with InGaAs/InAlGaAs superlattice-based active region

    Blokhin, Sergey A. / Ledentsov, Nikolay / Rochas, Stanislav S. et al. | British Library Conference Proceedings | 2022


    Development of flip-chip 1300 nm VCSELs

    Louderback, D.A. / Stone, R.V. / Graham, K.G. et al. | IEEE | 2002


    ThH4 Development of Flip-Chip 1300 nm VCSELs

    IEEE | British Library Conference Proceedings | 2002