A very low 82.5 A/cm/sup 2/ pulsed threshold current density was achieved for a quaternary AlInGaAs single quantum well laser, using a novel growth parameter optimization process employing a quaternary quantum wells line width broadening model.
Very low threshold current density for pseudomorphic quaternary AlInGaAs single quantum well lasers using a growth parameters optimization technique
1996-01-01
145928 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1996
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