A very low 82.5 A/cm/sup 2/ pulsed threshold current density was achieved for a quaternary AlInGaAs single quantum well laser, using a novel growth parameter optimization process employing a quaternary quantum wells line width broadening model.


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    Title :

    Very low threshold current density for pseudomorphic quaternary AlInGaAs single quantum well lasers using a growth parameters optimization technique


    Contributors:
    Gilor, J. (author) / Blumin, M. (author) / Samid, I. (author) / Fekete, D. (author)


    Publication date :

    1996-01-01


    Size :

    145928 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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