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    Title :

    Very Low Threshold Current Density For Pseudomorphic Quaternary AlInGaAs Single Quantum Well Lasers Using A Growth Parameters Optimization Technique



    Conference:

    International conference; 15th, Semiconductor laser ; 1996 ; Haifa; Israel



    Publication date :

    1996-01-01


    Size :

    2 pages


    Remarks:

    Also known as ISLC '96. IEEE cat no 96CH35896 and 96CB35896



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English





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    Pseudomorphic Single-Quantum-Well Lasers Emit At 980 Nm

    Larsson, Anders / Forouhar, Siamak / Cody, Jeffrey G. et al. | NTRS | 1992


    AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]

    Xu, Z.-T. / Yang, G.-W. / Xu, J.-Y. et al. | British Library Conference Proceedings | 1996