Very Low Threshold Current Density For Pseudomorphic Quaternary AlInGaAs Single Quantum Well Lasers Using A Growth Parameters Optimization Technique
International conference; 15th, Semiconductor laser ; 1996 ; Haifa; Israel
01.01.1996
2 pages
Also known as ISLC '96. IEEE cat no 96CH35896 and 96CB35896
Aufsatz (Konferenz)
Englisch
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