A monolithically integrated diode laser with waveguide devices has been described theoretically and experimentally. The lateral-electrode ridge-guided Fabry-Perot or DFB laser is coupled by the evanescent field to a strip loaded single-mode waveguide. The waveguide cladding consists of two layers: the upper layer is n-doped for a ground contact of the laser section, and the lower layer is nondoped to achieve low loss propagation in the waveguide. This device will be useful as a built-in component for various optical measurement equipments.


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    Title :

    Monolithic integration of lateral-electrode laser and waveguide devices in GaAs/AlGaAs


    Contributors:
    Okamoto, K. (author) / Yamada, A. (author) / Irita, T. (author) / Nakano, Y. (author) / Tada, K. (author)


    Publication date :

    1995-01-01


    Size :

    264544 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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