Monolithic integration of the optical isolator with a GaInAsP/InP laser diode can be achieved by employing a selective area growth technique. In order to investigate the feasibility of the monolithic integration approach, we must realize a laser diode on an active region and a magneto-optic waveguide on a passive region of an identical substrate. In this article, we report the fabrication of a Fabri-Perot laser diode and a magneto-optic waveguide on the selective-area-grown wafer.


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    Title :

    Monolithic integration of laser diode and magneto-optic waveguide


    Contributors:
    Sakurai, K. (author) / Yokoi, H. (author) / Mizumoto, T. (author) / Miyashita, D. (author) / Nakano, Y. (author)


    Publication date :

    2003-01-01


    Size :

    81715 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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