A monolithically integrated diode laser with waveguide devices has been described theoretically and experimentally. The lateral-electrode ridge-guided Fabry-Perot or DFB laser is coupled by the evanescent field to a strip loaded single-mode waveguide. The waveguide cladding consists of two layers: the upper layer is n-doped for a ground contact of the laser section, and the lower layer is nondoped to achieve low loss propagation in the waveguide. This device will be useful as a built-in component for various optical measurement equipments.
Monolithic integration of lateral-electrode laser and waveguide devices in GaAs/AlGaAs
01.01.1995
264544 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Monolithic Integration of Lateral-Electrode Laser and Waveguide Devices in GaAs/AlGaAs
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