A monolithically integrated diode laser with waveguide devices has been described theoretically and experimentally. The lateral-electrode ridge-guided Fabry-Perot or DFB laser is coupled by the evanescent field to a strip loaded single-mode waveguide. The waveguide cladding consists of two layers: the upper layer is n-doped for a ground contact of the laser section, and the lower layer is nondoped to achieve low loss propagation in the waveguide. This device will be useful as a built-in component for various optical measurement equipments.


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    Titel :

    Monolithic integration of lateral-electrode laser and waveguide devices in GaAs/AlGaAs


    Beteiligte:
    Okamoto, K. (Autor:in) / Yamada, A. (Autor:in) / Irita, T. (Autor:in) / Nakano, Y. (Autor:in) / Tada, K. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    264544 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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