Summary form only given. We demonstrate 1.3 /spl mu/m electroluminescence from a QD ensemble, MOCVD-grown on an n-GaAs substrate. We discuss optimized QD growth using MOCVD as well as characterization of the ensembles. By optimizing key parameters including growth temperature, V/III ratio, deposition rate and system pressure, we achieve surface densities of 8/spl times/10/sup 10//cm/sup 2/, and electroluminescence at 1.3 /spl mu/m with a full width at half maximum of 40 meV.
Electroluminescence and materials characterization of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 2 ; 614-615 vol.2
2002-01-01
342314 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2002
|British Library Conference Proceedings | 2003
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