Summary form only given. We demonstrate 1.3 /spl mu/m electroluminescence from a QD ensemble, MOCVD-grown on an n-GaAs substrate. We discuss optimized QD growth using MOCVD as well as characterization of the ensembles. By optimizing key parameters including growth temperature, V/III ratio, deposition rate and system pressure, we achieve surface densities of 8/spl times/10/sup 10//cm/sup 2/, and electroluminescence at 1.3 /spl mu/m with a full width at half maximum of 40 meV.


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    Title :

    Electroluminescence and materials characterization of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition


    Contributors:
    Huffaker, D.L. (author) / EL-Emawy, A.R. (author) / Birudavolu, S. (author) / Wong, P.S. (author) / Xu, H. (author) / Ukhanov, A. (author) / Malloy, H.J. (author)


    Publication date :

    2002-01-01


    Size :

    342314 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English