This study demonstrates lasing action with very low threshold current (6.7 mA) of InAs/GaAs quantum dots at the wavelength of 1.18 /spl mu/m grown by metalorganic chemical vapor deposition (MOCVD).


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    Title :

    Room temperature lasing with low threshold current of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition


    Contributors:
    Tatebayashi, J. (author) / Hatori, N. (author) / Ebe, H. (author) / Sudou, H. (author) / Kuramata, A. (author) / Sugawara, M. (author) / Arakawa, Y. (author)


    Publication date :

    2003-01-01


    Size :

    143396 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English