This study demonstrates lasing action with very low threshold current (6.7 mA) of InAs/GaAs quantum dots at the wavelength of 1.18 /spl mu/m grown by metalorganic chemical vapor deposition (MOCVD).
Room temperature lasing with low threshold current of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
2003-01-01
143396 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2003
|British Library Conference Proceedings | 2003
|British Library Conference Proceedings | 2002
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