In this paper, we found that the V/III ratio changes the PL wavelength of InAs keeping the density of dots high in the MOVPE growth of InAs dots with InGaAsP barriers on InP(100), and fabricated dots with high quality. Also, we showed the dots were able to be stacked and stable for the thermal process that was required for the device fabrication.


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    Title :

    InAs quantum dots on InP(100) grown by metalorganic vapor-phase epitaxy


    Contributors:
    Kawaguchi, K. (author) / Ekawa, M. (author) / Kuramata, A. (author) / Akiyama, T. (author) / Ebe, H. (author) / Sugawara, M. (author) / Arakawa, Y. (author)


    Publication date :

    2003-01-01


    Size :

    136041 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English