In this paper, we found that the V/III ratio changes the PL wavelength of InAs keeping the density of dots high in the MOVPE growth of InAs dots with InGaAsP barriers on InP(100), and fabricated dots with high quality. Also, we showed the dots were able to be stacked and stable for the thermal process that was required for the device fabrication.
InAs quantum dots on InP(100) grown by metalorganic vapor-phase epitaxy
2003-01-01
136041 byte
Conference paper
Electronic Resource
English
InAs Quantum Dots on InP(100) Grown by Metalorganic Vapor-Phase Epitaxy
British Library Conference Proceedings | 2003
|Metalorganic vapor phase epitaxy of quantum dots
IEEE | 2001
|WU1 Metalorganic Vapor Phase Epitaxy of Quantum Dots
British Library Conference Proceedings | 2001
|British Library Conference Proceedings | 2002
|