A very low threshold current density of 450A/cm/sup 2/ was obtained in a novel 1.3/spl mu/m InAsP/InP strained layer quantum well laser diode (LD) for the first time. Threshold current as low as 5.5mA was obtained in a buried heterostructure LD.


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    Title :

    Low threshold 1.3/spl mu/m InAsP/InP Strained Layer Quantum Well Laser Diodes Grown by Metalorganic Chemical Vapor Deposition


    Contributors:
    Kasukawa, A. (author) / Imajo, Y. (author) / Namegaya, T. (author) / Hiratani, Y. (author) / Kikuta, T. (author)


    Publication date :

    1992-01-01


    Size :

    138585 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English