The laser diode (LD) structure was grown on a c-plane sapphire substrate using MOCVD. In order to form stripe LDs the structure was etched using chemically assisted ion beam etching (CAIBE) until the n-type GaN layer was exposed. Laser facets were formed by CAIBE.
Properties of InGaN-GaN multi-quantum well laser diode grown by low pressure metalorganic chemical vapor deposition
1999-01-01
105265 byte
Conference paper
Electronic Resource
English
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