The laser diode (LD) structure was grown on a c-plane sapphire substrate using MOCVD. In order to form stripe LDs the structure was etched using chemically assisted ion beam etching (CAIBE) until the n-type GaN layer was exposed. Laser facets were formed by CAIBE.


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    Title :

    Properties of InGaN-GaN multi-quantum well laser diode grown by low pressure metalorganic chemical vapor deposition


    Contributors:
    Kim, T.I. (author)


    Publication date :

    1999-01-01


    Size :

    105265 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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