The laser diode (LD) structure was grown on a c-plane sapphire substrate using MOCVD. In order to form stripe LDs the structure was etched using chemically assisted ion beam etching (CAIBE) until the n-type GaN layer was exposed. Laser facets were formed by CAIBE.


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    Titel :

    Properties of InGaN-GaN multi-quantum well laser diode grown by low pressure metalorganic chemical vapor deposition


    Beteiligte:
    Kim, T.I. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    105265 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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