A very low threshold current density of 450A/cm/sup 2/ was obtained in a novel 1.3/spl mu/m InAsP/InP strained layer quantum well laser diode (LD) for the first time. Threshold current as low as 5.5mA was obtained in a buried heterostructure LD.
Low threshold 1.3/spl mu/m InAsP/InP Strained Layer Quantum Well Laser Diodes Grown by Metalorganic Chemical Vapor Deposition
01.01.1992
138585 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1992
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