We demonstrate, for the first time, optical response of a side-injection light-controlled bistable laser diode (SILC-BLD) buried with semi-insulating InP using hydride vapor phase epitaxy (HVPE). The buried surface around both the <110> and <-110> oriented mesas is flat. The bistable operation is obtained by applying control voltage to the saturable absorption region. The modulation bandwidth, f/sub 3dB/, for the injected optical signal is over 3.5 GHz.


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    Title :

    Semi-insulating buried heterostructure side-injection light-controlled bistable laser diode


    Contributors:
    Tadokoro, T. (author) / Kobayashi, F. (author) / Kishi, K. (author) / Nonaka, K. (author) / Amano, C. (author) / Itoh, Y. (author) / Mori, H. (author) / Kurokawa, T. (author)


    Publication date :

    1996-01-01


    Size :

    189896 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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