A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output ( over 30 dB) are observed.


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    Title :

    Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region


    Contributors:
    Nonaka, K. (author) / Tsuda, H. (author) / Kurokawa, T. (author) / Uenohara, H. (author) / lwamura, H. (author)


    Publication date :

    1992-01-01


    Size :

    172004 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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