A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output ( over 30 dB) are observed.


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    Titel :

    Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region


    Beteiligte:
    Nonaka, K. (Autor:in) / Tsuda, H. (Autor:in) / Kurokawa, T. (Autor:in) / Uenohara, H. (Autor:in) / lwamura, H. (Autor:in)


    Erscheinungsdatum :

    1992-01-01


    Format / Umfang :

    172004 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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