We demonstrate, for the first time, optical response of a side-injection light-controlled bistable laser diode (SILC-BLD) buried with semi-insulating InP using hydride vapor phase epitaxy (HVPE). The buried surface around both the <110> and <-110> oriented mesas is flat. The bistable operation is obtained by applying control voltage to the saturable absorption region. The modulation bandwidth, f/sub 3dB/, for the injected optical signal is over 3.5 GHz.


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    Titel :

    Semi-insulating buried heterostructure side-injection light-controlled bistable laser diode


    Beteiligte:
    Tadokoro, T. (Autor:in) / Kobayashi, F. (Autor:in) / Kishi, K. (Autor:in) / Nonaka, K. (Autor:in) / Amano, C. (Autor:in) / Itoh, Y. (Autor:in) / Mori, H. (Autor:in) / Kurokawa, T. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    189896 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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