GaAs/AlGaAs buried-heterostructure in-plane lasers and vertical-cavity surface-emitting lasers using GaInP:Fe as the burying layer have been fabricated and investigated. Regrowth of GaInP:Fe around etched laser mesas was achieved by hydride vapor phase epitaxy. The lasers exhibit good performance under CW operation and show promising high-speed characteristics.


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    Titel :

    GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth


    Beteiligte:
    Angulo Barrios, C. (Autor:in) / Lourdudoss, S. (Autor:in) / Messmer, L.R. (Autor:in) / Holmgren, M. (Autor:in) / Lovqvist, A. (Autor:in) / Carlsson, C. (Autor:in) / Larsson, A. (Autor:in) / Halonen, J. (Autor:in) / Ghisoni, M. (Autor:in) / Stevens, R. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    172651 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    GaAs/AlGaAs Buried -Heterostructure Laser Diodes with Semi-Insulating GaInP:Fe Regrowth

    Barrios, C. A. / Lourdudoss, S. / Messmer, E. R. et al. | British Library Conference Proceedings | 2001


    Novel regrowth technique for semi-insulating buried crescent lasers

    Ching-Long Jiang / Miller, R. / Ferreira, M. et al. | IEEE | 1993


    Novel Regrowth Technique for Semi-Insulating Buried Crescent Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993