GaAs/AlGaAs buried-heterostructure in-plane lasers and vertical-cavity surface-emitting lasers using GaInP:Fe as the burying layer have been fabricated and investigated. Regrowth of GaInP:Fe around etched laser mesas was achieved by hydride vapor phase epitaxy. The lasers exhibit good performance under CW operation and show promising high-speed characteristics.
GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth
01.01.2001
172651 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
GaAs/AlGaAs Buried -Heterostructure Laser Diodes with Semi-Insulating GaInP:Fe Regrowth
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