A new buried heterostructure (BH) is proposed for high-speed optical sources, based on selective regrowth of semi-insulating (SI-) InAlAs around an active mesa stripe. The performances of a first BH laser structure realised using SI-InAlAs were compared to that of standard InP:p/InP:n BH lasers. A reduction of the structure under both forward and reverse bias is obtained, with no degradation of the optical properties of the source.
New buried heterostructure using MOVPE selective regrowth of semi-insulating (SI-) InAlAs for low capacitance optical sources
2001-01-01
214533 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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