A new buried heterostructure (BH) is proposed for high-speed optical sources, based on selective regrowth of semi-insulating (SI-) InAlAs around an active mesa stripe. The performances of a first BH laser structure realised using SI-InAlAs were compared to that of standard InP:p/InP:n BH lasers. A reduction of the structure under both forward and reverse bias is obtained, with no degradation of the optical properties of the source.


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    Titel :

    New buried heterostructure using MOVPE selective regrowth of semi-insulating (SI-) InAlAs for low capacitance optical sources


    Beteiligte:
    Bouchoule, S. (Autor:in) / Decobert, J. (Autor:in) / Grosmaire, S. (Autor:in) / Leclerc, D. (Autor:in) / Kazmierski, C. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    214533 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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