A new buried heterostructure (BH) is proposed for high-speed optical sources, based on selective regrowth of semi-insulating (SI-) InAlAs around an active mesa stripe. The performances of a first BH laser structure realised using SI-InAlAs were compared to that of standard InP:p/InP:n BH lasers. A reduction of the structure under both forward and reverse bias is obtained, with no degradation of the optical properties of the source.


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    Title :

    New buried heterostructure using MOVPE selective regrowth of semi-insulating (SI-) InAlAs for low capacitance optical sources


    Contributors:
    Bouchoule, S. (author) / Decobert, J. (author) / Grosmaire, S. (author) / Leclerc, D. (author) / Kazmierski, C. (author)


    Publication date :

    2001-01-01


    Size :

    214533 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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