GaAs/AlGaAs buried-heterostructure in-plane lasers and vertical-cavity surface-emitting lasers using GaInP:Fe as the burying layer have been fabricated and investigated. Regrowth of GaInP:Fe around etched laser mesas was achieved by hydride vapor phase epitaxy. The lasers exhibit good performance under CW operation and show promising high-speed characteristics.


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    Title :

    GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth


    Contributors:
    Angulo Barrios, C. (author) / Lourdudoss, S. (author) / Messmer, L.R. (author) / Holmgren, M. (author) / Lovqvist, A. (author) / Carlsson, C. (author) / Larsson, A. (author) / Halonen, J. (author) / Ghisoni, M. (author) / Stevens, R. (author)


    Publication date :

    2001-01-01


    Size :

    172651 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    GaAs/AlGaAs Buried -Heterostructure Laser Diodes with Semi-Insulating GaInP:Fe Regrowth

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