For inspecting electrical failures in large-scale integration (LSI) circuits, we developed the laser-THz emission microscope (LTEM), which records the map of THz emission amplitude in a sample upon excitation with fs laser pulses. We successfully observed the THz emission image of MOSFETs embedded in a test element group under zero bias voltage. This result suggests that the LTEM can be used not only for the defect localization in LSI failure analysis but also as in-line inspection and monitoring.


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    Title :

    Non-contact measurement of MOSFET with zero bias voltage using the laser-THz emission microscope


    Contributors:
    Yamashita, M. (author) / Kiwa, T. (author) / Tonouchi, M. (author) / Nikawa, K. (author) / Otani, C. (author) / Kawase, K. (author)


    Publication date :

    2004-01-01


    Size :

    203283 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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