For inspecting electrical failures in large-scale integration (LSI) circuits, we developed the laser-THz emission microscope (LTEM), which records the map of THz emission amplitude in a sample upon excitation with fs laser pulses. We successfully observed the THz emission image of MOSFETs embedded in a test element group under zero bias voltage. This result suggests that the LTEM can be used not only for the defect localization in LSI failure analysis but also as in-line inspection and monitoring.
Non-contact measurement of MOSFET with zero bias voltage using the laser-THz emission microscope
2004-01-01
203283 byte
Conference paper
Electronic Resource
English
Observation of MOSFETs without Bias Voltage Using a Laser THz Emission Microscope
British Library Conference Proceedings | 2005
|British Library Conference Proceedings | 2005
|Laser Terahertz Emission Microscope
IEEE | 2006
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