We developed an infrared laser terahertz emission microscope (IR-LTEM) using 1 /spl mu/m wavelength fs laser pulses for inspecting electrical failures in large scale integration (LSI) chips from the backside. IR-LTEM detect the THz emission from the backside of the LSI chip and the THz emission image which reflects the photocurrent distribution in circuits can be obtained by scanning the chips with fs laser. We succeeded in obtaining the THz emission image of a MOSFET sample from the backside of the chip under zero bias condition. The backside observation of the LSI chip is indispensable for generating and detecting the THz emission because most LSI chips have a multilayered interconnection structure and their surface is mostly covered with metal interconnects, hindering the observation from the front surface.


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    Title :

    Backside observation of MOSFET chips using an infrared laser THz emission microscope


    Contributors:
    Yamashita, M. (author) / Nikawa, K. (author) / Tonouchi, M. (author) / Otani, C. (author) / Kawase, K. (author)


    Publication date :

    2005-01-01


    Size :

    932678 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    FA3-1 KEYNOTE ADDRESS: Backside Observation of MOSFET Chips using an Infrared Laser Terahertz Emission Microscope

    Yamashita, M. / Nikawa, K. / Tonouchi, M. et al. | British Library Conference Proceedings | 2005



    Visual observation of infrared laser emission

    Vasilenko, L.S. / Chebotaev, V.P. / Triitskii, Yu.V. | Engineering Index Backfile | 1965


    Observation of MOSFETs without bias voltage using a laser-THz emission microscope

    Yamashita, M. / Kawase, K. / Otani, C. et al. | IEEE | 2005


    Observation of MOSFETs without Bias Voltage Using a Laser THz Emission Microscope

    Yamashita, M. | British Library Conference Proceedings | 2005