For inspecting electrical failures in large-scale integration (LSI) circuits, we developed the laser-THz emission microscope (LTEM), which records the map of THz emission amplitude in a sample upon excitation with fs laser pulses. We successfully observed the THz emission image of MOSFETs embedded in a test element group under zero bias voltage. This result suggests that the LTEM can be used not only for the defect localization in LSI failure analysis but also as in-line inspection and monitoring.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Non-contact measurement of MOSFET with zero bias voltage using the laser-THz emission microscope


    Beteiligte:
    Yamashita, M. (Autor:in) / Kiwa, T. (Autor:in) / Tonouchi, M. (Autor:in) / Nikawa, K. (Autor:in) / Otani, C. (Autor:in) / Kawase, K. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    203283 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Observation of MOSFETs without Bias Voltage Using a Laser THz Emission Microscope

    Yamashita, M. | British Library Conference Proceedings | 2005


    Observation of MOSFETs without bias voltage using a laser-THz emission microscope

    Yamashita, M. / Kawase, K. / Otani, C. et al. | IEEE | 2005


    Backside observation of MOSFET chips using an infrared laser THz emission microscope

    Yamashita, M. / Nikawa, K. / Tonouchi, M. et al. | IEEE | 2005


    FA3-1 KEYNOTE ADDRESS: Backside Observation of MOSFET Chips using an Infrared Laser Terahertz Emission Microscope

    Yamashita, M. / Nikawa, K. / Tonouchi, M. et al. | British Library Conference Proceedings | 2005


    Laser Terahertz Emission Microscope

    Tonouchi, Masayoshi | IEEE | 2006