For inspecting electrical failures in large-scale integration circuits (LSI), we developed a laser-THz emission microscope (LTEM), which records the map of the THZ emission amplitude in a sample upon excitation with fs laser pulses. We successfully obtained the THz emission image of MOSFETs fabricated in a test element group without bias voltage. We also measured MOSFETs in which the connection lines from the electrodes to the p-n junctions were interrupted, and found that the polarity of the temporal waveform of the THz emission from the p-n junction in damaged MOSFETs has the opposite sign compared to that in normal MOSFETs. This result indicates that the LTEM is a potential tool for the inspection of MOSFETs without bias voltage, which is the advantage for the failure analysis of semiconductor devices during the manufacturing process.
Observation of MOSFETs without bias voltage using a laser-THz emission microscope
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 3 ; 2117-2119 Vol. 3
2005-01-01
1338764 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Observation of MOSFETs without Bias Voltage Using a Laser THz Emission Microscope
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