Summary form only given. The GaAsP-AlGaAs strained quantum-well layer wafers were grown by low-pressure metal-organic vapor phase epitaxy on Si-doped (100)-oriented GaAs substrates. The fabricated laser wafer structure with three GaAsP quantum-well active-layers is shown. The lattice mismatch between quantum-well and substrate is about 0.36%. We have demonstrated modulation at 100 MHz utilizing polarization mode switching. The modulation depth is about 9.0 dB in TM mode, with an output peak of 3 mW. This laser will be useful for optically sensing devices using polarization.


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    Title :

    Polarization modulation of GaAsP/AlGaAs tensilely strained quantum-well laser diodes


    Contributors:
    Tanaka, H. (author) / Shimada, J. (author) / Suzuki, Y. (author)

    Published in:

    Proceedings of LEOS'94 ; 1 ; 111-112 vol.1


    Publication date :

    1994-01-01


    Size :

    149504 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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