Summary form only given. The GaAsP-AlGaAs strained quantum-well layer wafers were grown by low-pressure metal-organic vapor phase epitaxy on Si-doped (100)-oriented GaAs substrates. The fabricated laser wafer structure with three GaAsP quantum-well active-layers is shown. The lattice mismatch between quantum-well and substrate is about 0.36%. We have demonstrated modulation at 100 MHz utilizing polarization mode switching. The modulation depth is about 9.0 dB in TM mode, with an output peak of 3 mW. This laser will be useful for optically sensing devices using polarization.
Polarization modulation of GaAsP/AlGaAs tensilely strained quantum-well laser diodes
Proceedings of LEOS'94 ; 1 ; 111-112 vol.1
1994-01-01
149504 byte
Conference paper
Electronic Resource
English
Polarization Modulation of GaAsP/AlGaAs Tensilely Strained Quantum-Well Laser Diodes
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