Summary form only given. The GaAsP-AlGaAs strained quantum-well layer wafers were grown by low-pressure metal-organic vapor phase epitaxy on Si-doped (100)-oriented GaAs substrates. The fabricated laser wafer structure with three GaAsP quantum-well active-layers is shown. The lattice mismatch between quantum-well and substrate is about 0.36%. We have demonstrated modulation at 100 MHz utilizing polarization mode switching. The modulation depth is about 9.0 dB in TM mode, with an output peak of 3 mW. This laser will be useful for optically sensing devices using polarization.


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    Titel :

    Polarization modulation of GaAsP/AlGaAs tensilely strained quantum-well laser diodes


    Beteiligte:
    Tanaka, H. (Autor:in) / Shimada, J. (Autor:in) / Suzuki, Y. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 111-112 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    149504 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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