The carrier density - gain relationship in the active region has a significant impact on the dynamic performance of a VCSEL. This impact is investigated both theoretically and experimentally on different 850 nm VCSELs.


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    Title :

    Simulations and measurements of the dynamic performance of 850 nm VCSELs with GaAs and InGaAs quantum well active regions


    Contributors:


    Publication date :

    2002-01-01


    Size :

    114942 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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