The carrier density - gain relationship in the active region has a significant impact on the dynamic performance of a VCSEL. This impact is investigated both theoretically and experimentally on different 850 nm VCSELs.
Simulations and measurements of the dynamic performance of 850 nm VCSELs with GaAs and InGaAs quantum well active regions
01.01.2002
114942 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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