The carrier density - gain relationship in the active region has a significant impact on the dynamic performance of a VCSEL. This impact is investigated both theoretically and experimentally on different 850 nm VCSELs.


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    Titel :

    Simulations and measurements of the dynamic performance of 850 nm VCSELs with GaAs and InGaAs quantum well active regions


    Beteiligte:
    Marcks von Wurtemberg, R. (Autor:in) / Aggerstam, T. (Autor:in) / Runnstrom, C. (Autor:in) / Chitica, N. (Autor:in) / Malmquist, J. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    114942 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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