Summary form only given. We have succeeded to produce high performance VCSELs emitting at 1300nm with bitrates up to 10 Gbit/s and output-powers above 1 mW with both approaches. Our long-wavelength devices comprise intracavity contacts in order to reduce absorption losses due to doped layers. We present different devices and discuss the impact of design and growth methods.


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    Titel :

    GaInNAs quantum well VCSELs


    Beteiligte:
    Steinle, G. (Autor:in) / Ramakrishnan, A. (Autor:in) / Supper, D. (Autor:in) / Kristen, G. (Autor:in) / Pfeiffer, J. (Autor:in) / Riechert, H. (Autor:in) / Geelhaar, L. (Autor:in) / Degen, Ch. (Autor:in) / Ebbinghaus, G. (Autor:in) / Wolf, H.D. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    122562 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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