Summary form only given. We have succeeded to produce high performance VCSELs emitting at 1300nm with bitrates up to 10 Gbit/s and output-powers above 1 mW with both approaches. Our long-wavelength devices comprise intracavity contacts in order to reduce absorption losses due to doped layers. We present different devices and discuss the impact of design and growth methods.


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    Title :

    GaInNAs quantum well VCSELs


    Contributors:
    Steinle, G. (author) / Ramakrishnan, A. (author) / Supper, D. (author) / Kristen, G. (author) / Pfeiffer, J. (author) / Riechert, H. (author) / Geelhaar, L. (author) / Degen, Ch. (author) / Ebbinghaus, G. (author) / Wolf, H.D. (author)


    Publication date :

    2002-01-01


    Size :

    122562 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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