Summary form only given. We have succeeded to produce high performance VCSELs emitting at 1300nm with bitrates up to 10 Gbit/s and output-powers above 1 mW with both approaches. Our long-wavelength devices comprise intracavity contacts in order to reduce absorption losses due to doped layers. We present different devices and discuss the impact of design and growth methods.
GaInNAs quantum well VCSELs
2002-01-01
122562 byte
Conference paper
Electronic Resource
English
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