Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities
OPTICAL AND QUANTUM ELECTRONICS ; 38 , 4-6 ; 325-337
01.01.2006
13 pages
Aufsatz (Zeitschrift)
Englisch
DDC: | 537.5 |
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