This study presents the design and performance of self-assembled quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) in a bipolar cascade configuration. The experimental VCSELs are grown by molecular beam epitaxy and consist of highly reflective Al/sub x/Ga/sub 1-x/As (x = 0.0 and x = 0.9) doped DBR mirrors on a GaAs substrate, surrounding a GaAs-based microcavity active region containing stacks of InAs/InGaAs QDs.


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    Title :

    GaAs-based bipolar cascade InAs/InGaAs quantum dot VCSELs emitting near 1300 nm


    Contributors:
    Lott, J.A. (author) / Stintz, A. (author) / Kovsh, A.R. (author) / Ledentsov, N.N. (author)


    Publication date :

    2005-01-01


    Size :

    182726 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    GaAs-Based Bipolar Cascade InAs/InGaAs Quantum Dot VCSELs Emitting Near 1300 nm

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