Al-free InGaAsP/GaAs SCH SQW (/spl lambda/=0.8 /spl mu/m) single-mode buried laser diodEs having parameters comparable with the best achievements for AlGaAs/GaAs diodes have been fabricated for the first time.
High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes
1992-01-01
137307 byte
Conference paper
Electronic Resource
English
High-Power Al-Free Buried InGaAsP/GaAs (lambda =0.8 m) Laser Diodes
British Library Conference Proceedings | 1992
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