Al-free InGaAsP/GaAs SCH SQW (/spl lambda/=0.8 /spl mu/m) single-mode buried laser diodEs having parameters comparable with the best achievements for AlGaAs/GaAs diodes have been fabricated for the first time.


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    Title :

    High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes


    Contributors:


    Publication date :

    1992-01-01


    Size :

    137307 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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