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    Title :

    High-Power Al-Free Buried InGaAsP/GaAs (lambda =0.8 m) Laser Diodes


    Contributors:

    Conference:

    13th, International semiconductor laser conference ; 1992 ; Takamatsu; Japan



    Publication date :

    1992-01-01


    Size :

    4 pages


    Remarks:

    Described as the conference digest



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes

    Garbuzov, D.Z. / Antonishkis, N.Y. / Il'inskaya, N.D. et al. | IEEE | 1992


    High-power Al-free active region InGaAsP/GaAs (Lambda=852 nm) laser diodes for atomic clocks and interferometry applications [5620-43]

    Vermersch, F.-J. / Lecomte, M. / Calligaro, M. et al. | British Library Conference Proceedings | 2004


    High Power InGaAsP-based Laser Diodes

    Razeghi, M. | British Library Online Contents | 1995


    `On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP (Lambda = 1.53-1.55 mum) laser diodes

    Paraskevopoulos, A. / Hensel, H.-J. / Schelhase, S. et al. | British Library Online Contents | 2001


    High power InGaAsP laser diodes with circular beam profile

    Jeon, H. / Mathur, A. / Ziari, M. et al. | British Library Conference Proceedings | 1998